IRFPG50 Transistor Datasheet, IRFPG50 Equivalent, PDF Data Sheets. MOSFET . Parameters and Characteristics. Electronic Component Catalog. IRFPG50 MOSFET N-CH 1KV A TOAC Vishay IR datasheet pdf data sheet FREE from Datasheet (data sheet) search for integrated. IRFPG50 datasheet, IRFPG50 circuit, IRFPG50 data sheet: IRF – Power MOSFET (Vdss=V, Rds(on)=ohm, Id=A),alldatasheet, datasheet, Datasheet.
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IRFPG50 PDF Datasheet浏览和下载
Full text of ” internationalRectifier:: Users of International Rectifier devices in life support applications assume all risks of such use and indemnify Datashet Rectifier against all damages resulting from such use. Reproduction or use of editorial or pictorial content without expressed permission in writing is prohibited. In the interest of product improvement, International Rectifier reserves the right to change specifications without notice. However, International Rectifier can assume no responsibility for its use dataasheet any infringement of patents or other rights datashete third parties which may result orfpg50 its use.
No license is granted by implication or other use under any patent or patent rights of International Rectifier. No patent liability shall be incurred for use of the circuits or devices described herein. Data subject to change without notice. To specify add suffix 13′ for 3mm and 15′ for 5mm, e. A-3 Bridges Single Phase Diode 1. E 1 Value given for RthJC is per module. For anode to stud change “N” to “R” in basic part number, e.
Vfm at rated If AV. B l B l 16 1.
IRFN Pinout, Features, Equivalent & Datasheet
For Anode to stud add “R” to Basic part number e. Leaded and sleeved version available – to specify add “2” to second digit on part number e. For case outline drawing see page For anode to stud add “R” to basic part number e.
For anode to stud add “FT to basic part number e. To specify add “M” to part number e. To specify add “F’ to part number e. To specify add H F” to part number e. To specify add “F” to part number e.
To specify add “F to part number e. For anode to stud, add “FT to basic part number e. Consult factory for new type availability. Add suffix N to part number. I to- 75 3. Contact factory for new type availability. Contact factory 5 Center tap, circuit common anode. E 1 This series offers voltage suppression. All others are AC or DC.
Power dissipation of more than 1 W is possible in a typical printed circuit board application. The SO-8 is designed for all soldering techniques.
IRFPG50 datasheet(7/8 Pages) IRF | Power MOSFET(Vdss=V, Rds(on)=ohm, Id=A)
Its unique package design allows for maximum die size, optimum thermal performance and ease of surface-mount manufacturing; suitable for use with all soldering techniques. They can dissipate up to 2W in atypical surface mount application and are available In tape and reel. They can dissipate up to 2W in atypical surface mount application and are available in tape and reel. The molding compound and package design provides a high isolation capability and low thermal impedance between the tab and external heatsink along with excellent creepage and clearance distances to meet safety requirements.
Consequently, the FullPak requires no further external isolation barrier saving a significant amount of additional labor and reducing component count and cost. The current-sensing is accomplished through the addition of the kelvin and current-sense connections providing for greater accuracy, wider bandwidths and cost-savings in current-mode applications.
For more detailed information, please refer to the most current data sheet. Recommended wire size for Gate, Kelvin and Current Sense connections: This irfph50 enables IR to provide low voltage up to 60V high side protected switches and up to V protected low side switches.
These switches are used for high datadheet systems in automotive, office equipment, industrial automation systems. Tj sdtyp. V dsclamp Rds on typ. Vds, clamp Rds on typ. IR 35 12 72 0.
For case outline drawings see page They may include three different package outlines. These packages are available with Customer specified lead forming and terminations are standard configurations as described on page and also available, are also available for semi-custom design to meet your Powerline Packages for standard or semi-custom designs. IR has years of experience designing and manufacturing custom products and can provide the flexibility and expertise necessary to meet your unique power packaging requirement.
Computer- aided design and thermal analysis capabilities are utilized to minimize the time and cost of achieving the most complex and demanding design requirements.
The combined experience of our development team offers design support and customer responsiveness second to none. Advanced Manufacturing Our manufacturing facility houses a full compliment of automatic assembly and test equipment necessary to develop and manufacture power modules to meet virtually any application specific power packaging requirement.
This facility offers flexibility to provide hybrid prototype datasheeh in a short cycle time and high volume capacity to meet your production requirements with delivery you can rely upon.
Dedicated thick film or direct bond processing, design capability, automatic testing and lead forming capabilities provide irffpg50 foundation for a total and immediate responsiveness to product quality, reliability, performance and delivery.
At the forefront of power hybrid technology, both screen printing thick film and direct bond lead-frame technologies are available.
Ceramic Substrate or Insulated Metal Substrate technologies with integrated heat-sink systems are offered. Whatever your specific needs, the power packaging technologies are available to provide advanced integration for optimized performance in the minimal space required. Frequency limited by T, max. Frequency limited by Tj max. Frequency limited by max. Schottky Diode Discrete 1. Frequency limited by T d max. For anode to stud, add “R” to basic part number e.
PC 85 2. PV 85 1. PC 85 1. For anode to stud change “N” to “R” e. To specify change “P” to “F” in part number e. To specify add “B” to part number e. For anode to stud add “R” to part number e. C 55 2. C 55 1. To specify change “P” to “M” in part number e. II For case outline drawing see page M II For case outline drawing see page Case Style IRF 60 0.
N 1 For case outline drawing see page Case style D 7 -JL. Case style D Shown below are IR’s standard leadform offerings. For the correct suffix refer to the leadform options which are shown below.
Shown below are IR’s standard Ieadform offerings. For the correct suffix refer to the Ieadform options which are shown below. Quantities are in multiples of pieces per reel forTR. Dimensions in millimeters and inches International [! Case Style D 7. Tape width T 6.
Reel outside diameter D Each component lead shall be sandwiched between tapes for a minimum of 3. Quantities are in multiples of 2, pieces per reel for TR. All 3 digits face the same direction.
See the drawing below for the marking code. Bulk quantities are supplied in plastic packages. LX —I h— 1. For die outline drawing see page