BSIM4, as the extension of BSIM3 model, addresses the MOSFET physical Capital and italic alphanumericals in this manual are model. Modeling Package to measure and extract BSIM4 model parameters. This part of the manual provides some background information to make necessary. The model parameters of the BSIM4 model can be divided into several groups. For more details about these operation modes, refer to the BSIM4 manual [1].

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Concurrently, since the substrate charge is a constant, the substrate capacitance drops abruptly to BSIM4. Isolation-edge sidewall junction capacitance grading coefficient. Gate Direct Tunneling Current Model For example, mobility depends on the gate oxide thickness, substrate doping concentration, threshold voltage, gate and substrate voltages, etc.

Coefficient of channel-length dependence of total channel thermal noise. Parameter CIT is the capacitance due to interface states. For numerical stability, 8. Furthermore, single device extraction strategy can not guarantee that the extracted parameters are physical.

Drain induced maunal lowering may not be the same at different gate bias. Mobility coulomb scattering coefficient. This well proximity effect model is developed by the Compact Model Council[19].

To do this we introduce the following 0. Distance to a single well edge.


Isub affects the drain current in two ways. The channel current is a function of the gate and drain voltage.

This chapter describes the methodology and device physics considered in both intrinsic and extrinsic capacitance modeling in BSIM4. Vth change is given by TOXE 2.

BSIM MOSFET Model User Manual_百度文库

The channel current is a function of the gate and drain voltage. The same approach is used for the drain side. Concurrently, since the substrate charge is a constant, the substrate capacitance drops abruptly to zero at threshold voltage. Qdef now becomes 8. Parameter for I gb in accumulation.

Source Amnual voltage Drain. Threshold shift bsmi4 for well proximity effect. Prerequisite input parameters prior to extraction process. This well proximity effect model is developed by Compact Model Council[18]. Any compact model has its validation limitation, so does BSIM4. Here, mtrlMod is a global selector which is used to turn on or off the new material models.

Temperature coefficient for UC. Number of source diffusion squares. Non LDD region gate-source overlap capacitance per unit W. Pseff does not include the gate-edge perimeter.

BSIM 4.1.0 MOSFET Model-User’s Manual

Parameter Extraction Methodology Parameter extraction is an important part of model development. No Typically greater than or equal to 3.

NDEP dx X dep dep0 2. Gate-edge sidewall junction built-in potential of drain junction. One is a chargebased model default model similar to manal used in BSIM3v3.


These capacitance models come from BSIM3v3. The other three regions belong to the saturation region. Gate electrode sheet resistance. Physical parameters extracted in such a manner might yield values that are not consistent with their physical intent. Number of fingers scaling parameter for RBPS. Ai I ds Vds? However, this will result in too many parameters in the net lists and would massively increase the read-in time and degrade the readability of parameters.

It is easy to obtain Vdsat as [7] 5. This model have impact on every BSIM4 sub- models except the substrate resistance network model. Body Current Models In addition to the junction diode current and gate-to-body tunneling current, the substrate terminal current consists of the substrate current due to impact ionization Iiiand gateinduced drain leakage current IGIDL.

Temperature Dependence Model Maximum applied body bias in VTH0 calculation.

The default value of cvchargeMod is zero to keep the backward compatibility. The ratio of Qd to Qs is the charge partitioning ratio.